NSN 5961-01-128-4825 · NIIN 011284825 · FSC 5961
NO DASHES 5961011284825
In Stock
SEMICONDUCTOR DEVICES,UNITIZED
Semiconductor Devices and Associated Hardware
Technical characteristics
14 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ABHP | OVERALL LENGTH | INCHES NOMINAL 3.620 |
| ABKW | OVERALL HEIGHT | INCHES NOMINAL 0.787 |
| ABMK | OVERALL WIDTH | INCHES NOMINAL 1.417 |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ASKA | COMPONENT NAME AND QUANTITY | SEMICONDUCTOR DEVICE THYRISTOR 2 |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE(S) |
| CTMZ | SEMICONDUCTOR MATERIAL | ALL SEMICONDUCTOR DEVICE DIODE SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ALL SEMICONDUCTOR DEVICE THYRISTOR MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE 1300.0 AND MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE 1200.0 AND MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE 1200.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | ALL SEMICONDUCTOR DEVICE THYRISTOR AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT 50.00 AND AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE 25.00 AND AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE 300.00 |
| CTRD | POWER RATING PER CHARACTERISTIC | ALL SEMICONDUCTOR DEVICE THYRISTOR WATTS MAXIMUM PEAK GATE POWER DISSIPATION 10.0 AND WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION 0.5 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CELSIUS AMBIENT AIR 125.0 |
| MATT | MATERIAL | ENCLOSURE PLASTIC |
| TEST | TEST DATA DOCUMENT | DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) 10110-140195 |
| TTQY | TERMINAL TYPE AND QUANTITY | SCREW 3 |