NSN 5962-01-421-1336 · NIIN 014211336 · FSC 5962
NO DASHES 5962014211336
In Stock
MICROCIRCUIT,MEMORY
Microcircuits, Electronic
Technical characteristics
13 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | MILLIWATTS 495.0 |
| AFGA | OPERATING TEMP RANGE | CELSIUS -55.0 TO 125.0 |
| AFJQ | STORAGE TEMP RANGE | CELSIUS -65.0 TO 150.0 |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | VOLTS MAXIMUM POWER SOURCE 7.0 |
| CZEQ | TIME RATING PER CHACTERISTIC | NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT 150.00 AND NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT 150.00 |
| CZER | MEMORY DEVICE TYPE | RAM |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TTQY | TERMINAL TYPE AND QUANTITY | LEADLESS 32 |