NSN 5961-01-703-3623 · NIIN 017033623 · FSC 5961
NO DASHES 5961017033623
In Stock
SEMICONDUCTOR DEVICE,DIODE
Semiconductor Devices and Associated Hardware
Application: EA-18G
Technical characteristics
19 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| PRPY | PROPRIETARY CHARACTERISTICS | PACS |
| AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING AND VOLTAGE REFERENCE |
| AGAV | END ITEM IDENTIFICATION | EA-18G |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | PIN 3 |
| ABHP | OVERALL LENGTH | MILLIMETERS MINIMUM 1.80 AND MILLIMETERS MAXIMUM 2.20 |
| ABJT | TERMINAL LENGTH | MILLIMETERS MINIMUM 0.25 AND MILLIMETERS MAXIMUM 0.40 |
| BBJD | FIELD FORCE EFFECT TYPE | MAGNETIC FIELD |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MOISTURE SENSITIVE AND MOUNTING PAD AND ROHS DIRECTIVE COMPLIANCE |
| CTRG | CAPACITANCE RATING IN PICOFARADS | MAXIMUM 50.0 |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| FEAT | SPECIAL FEATURES | OPERATING AND STORAGE TEMPERATURE RANGE; -55 DEG C TO +150 DEG C; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET); LOW-ON RESISTANCE; TOTALLY LEAD FREE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | MINIMUM DRAIN TO SOURCE VOLTAGE 60.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | MILLIAMPERES MAXIMUM DRAIN CURRENT 115.0 |
| CTRD | POWER RATING PER CHARACTERISTIC | MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 200.0 |
| MATT | MATERIAL | ENCLOSURE PLASTIC |
| ABMK | OVERALL WIDTH | MILLIMETERS MINIMUM 2.00 AND MILLIMETERS MAXIMUM 2.20 |
| ABKW | OVERALL HEIGHT | MILLIMETERS MINIMUM 0.90 AND MILLIMETERS MAXIMUM 1.00 |