NSN 5961-01-104-8309 · NIIN 011048309 · FSC 5961
NO DASHES 5961011048309
In Stock
TRANSISTOR
Semiconductor Devices and Associated Hardware
Technical characteristics
15 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ABHP | OVERALL LENGTH | INCHES MINIMUM 0.170 AND INCHES MAXIMUM 0.210 |
| ABJT | TERMINAL LENGTH | INCHES MINIMUM 0.500 |
| ADAV | OVERALL DIAMETER | INCHES MINIMUM 0.175 AND INCHES MAXIMUM 0.205 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | INCHES NOMINAL 0.100 |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN 60.0 AND MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 40.0 AND MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN 6.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 200.00 |
| CTRD | POWER RATING PER CHARACTERISTIC | MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION 350.0 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CELSIUS JUNCTION 200.0 |
| FEAT | SPECIAL FEATURES | SLECTED 2N3904 JEDEC DWG TYPE TRANSISTOR; LOW LEAKAGE 0.5 NANO AMP; JUNCTION PATTERN ARRANGEMENT: NPN |
| MATT | MATERIAL | ENCLOSURE PLASTIC |
| TTQY | TERMINAL TYPE AND QUANTITY | UNINSULATED WIRE LEAD 3 |