NSN 5961-01-111-5660 · NIIN 011115660 · FSC 5961
NO DASHES 5961011115660
In Stock
TRANSISTOR
Semiconductor Devices and Associated Hardware
Technical characteristics
15 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ABHP | OVERALL LENGTH | INCHES MAXIMUM 0.260 |
| ABJT | TERMINAL LENGTH | INCHES MINIMUM 1.500 |
| ADAV | OVERALL DIAMETER | INCHES MAXIMUM 0.370 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | INCHES NOMINAL 0.200 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | MAXIMUM EMITTER TO BASE VOLTAGE, DC 6.0 AND MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN 400.0 AND MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER 400.0 AND MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN 350.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | AMPERES MAXIMUM COLLECTOR CURRENT, DC 1.00 AND AMPERES MAXIMUM BASE CURRENT, DC 0.50 |
| CTRD | POWER RATING PER CHARACTERISTIC | WATTS MAXIMUM TOTAL DEVICE DISSIPATION 2.0 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CELSIUS AMBIENT AIR 175.0 |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TTQY | TERMINAL TYPE AND QUANTITY | UNINSULATED WIRE LEAD 3 |