NSN 5961-01-331-3186 · NIIN 013313186 · FSC 5961
NO DASHES 5961013313186
In Stock
SEMICONDUCTOR DEVICE SET
Semiconductor Devices and Associated Hardware
Technical characteristics
16 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ABHP | OVERALL LENGTH | ALL TRANSISTOR INCHES MINIMUM 0.170 AND INCHES MAXIMUM 0.210 |
| ABJT | TERMINAL LENGTH | ALL TRANSISTOR INCHES MINIMUM 0.500 |
| ADAV | OVERALL DIAMETER | ALL TRANSISTOR INCHES MINIMUM 0.208 AND INCHES MAXIMUM 0.238 |
| ALAS | INTERNAL CONFIGURATION | ALL TRANSISTOR FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | TRANSISTOR 2 |
| AXGY | MOUNTING METHOD | ALL TRANSISTOR TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | ALL TRANSISTOR INCHES NOMINAL 0.100 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE |
| CTMZ | SEMICONDUCTOR MATERIAL | ALL TRANSISTOR SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ALL TRANSISTOR MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE 10.0 AND MAXIMUM DRAIN TO SUBSTRATE VOLTAGE 15.0 AND MAXIMUM SOURCE TO SUBSTRATE VOLTAGE 15.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | ALL TRANSISTOR MILLIAMPERES MAXIMUM DRAIN CURRENT 50.00 |
| CTRD | POWER RATING PER CHARACTERISTIC | ALL TRANSISTOR MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION 300.0 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | ALL TRANSISTOR CELSIUS AMBIENT AIR 125.0 |
| TTQY | TERMINAL TYPE AND QUANTITY | ALL TRANSISTOR UNINSULATED WIRE LEAD 4 |