NSN 5962-01-444-9515 · NIIN 014449515 · FSC 5962
NO DASHES 5962014449515
In Stock
MICROCIRCUIT,MEMORY
Microcircuits, Electronic
Application: F-15I
Technical characteristics
20 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ADAQ | BODY LENGTH | INCHES MAXIMUM 1.700 |
| ADAT | BODY WIDTH | INCHES MINIMUM 0.390 AND INCHES MAXIMUM 0.420 |
| ADAU | BODY HEIGHT | INCHES MAXIMUM 0.232 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | WATTS 1.0 |
| AFGA | OPERATING TEMP RANGE | CELSIUS -55.0 TO 125.0 |
| AFJQ | STORAGE TEMP RANGE | CELSIUS -65.0 TO 150.0 |
| AGAV | END ITEM IDENTIFICATION | F-15I |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND LOW POWER AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER,MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | VOLTS MINIMUM TOTAL SUPPLY -0.5 AND VOLTS MAXIMUM TOTAL SUPPLY 7.0 |
| CZEQ | TIME RATING PER CHACTERISTIC | NANOSECONDS NOMINAL ACCESS 85.00 |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | CIRCUIT FUNCTION-DUAL CE |
| TEST | TEST DATA DOCUMENT | STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). 96906--IL-STD-883 |
| TTQY | TERMINAL TYPE AND QUANTITY | PRINTED CIRCUIT 32 |