NSN 5962-01-365-2256 · NIIN 013652256 · FSC 5962
NO DASHES 5962013652256
In Stock
MICROCIRCUIT,MEMORY
Microcircuits, Electronic
Application: LUG IN UNIT E/I FSCM 76301
Technical characteristics
18 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | MILLIWATTS 633.0 |
| AFGA | OPERATING TEMP RANGE | CELSIUS -55.0 TO 125.0 |
| AFJQ | STORAGE TEMP RANGE | CELSIUS -65.0 TO 150.0 |
| AGAV | END ITEM IDENTIFICATION | LUG IN UNIT E/I FSCM 76301 |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | MIL-M-38510 D-2 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL-PROGRAMMABLE READ ONLY MEMORY (PROM) |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | VOLTS MINIMUM APPLIED -0.5 AND VOLTS MAXIMUM APPLIED 7.0 |
| CZEQ | TIME RATING PER CHACTERISTIC | NANOSECONDS NOMINAL ACCESS 50.00 |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| TEST | TEST DATA DOCUMENT | DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) 76301-75B049008-1003 |
| TTQY | TERMINAL TYPE AND QUANTITY | PRINTED CIRCUIT 16 |
| ZZZK | SPECIFICATION/STANDARD DATA | GOVERNMENT STANDARD 96906--IL-STD-883 |
Cross-references
3 manufacturer part numbers on file for this NSN — each shown against the CAGE code it belongs to.
| Manufacturer part number | CAGE |
|---|---|
| 5962-8670301EA | 67268 |
| 75B049008-1003 | 76301 |
| ROM/PROM FAMILY 186 | 16236 |