NSN 5961-01-210-1785 · NIIN 012101785 · FSC 5961
NO DASHES 5961012101785
In Stock
SEMICONDUCTOR DEVICE,DIODE
Semiconductor Devices and Associated Hardware
Technical characteristics
16 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| ABHP | OVERALL LENGTH | INCHES MAXIMUM 0.300 |
| ABJT | TERMINAL LENGTH | INCHES MINIMUM 1.000 |
| ADAV | OVERALL DIAMETER | INCHES MAXIMUM 0.140 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | NOMINAL NOMINAL REGULATOR VOLTAGE 47.0 |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT 0.05 AND MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION 8.50 |
| CTRD | POWER RATING PER CHARACTERISTIC | MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 400.0 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CELSIUS JUNCTION 200.0 |
| FEAT | SPECIAL FEATURES | HARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN |
| MATT | MATERIAL | ENCLOSURE GLASS |
| MATT | MATERIAL | SEMICONDUCTOR SILICON |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) 00167-938D392 |
| TTQY | TERMINAL TYPE AND QUANTITY | UNINSULATED WIRE LEAD 2 |