NSN 5961-00-194-8779 · NIIN 001948779 · FSC 5961
NO DASHES 5961001948779
In Stock
TRANSISTOR
Semiconductor Devices and Associated Hardware
Technical characteristics
14 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| AXGY | MOUNTING METHOD | TERMINAL |
| ABHP | OVERALL LENGTH | INCHES MAXIMUM 0.210 |
| ABJT | TERMINAL LENGTH | INCHES MINIMUM 0.500 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CELSIUS JUNCTION 100.0 |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PN |
| TTQY | TERMINAL TYPE AND QUANTITY | UNINSULATED WIRE LEAD 4 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE -10.0 AND MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE -10.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | MILLIAMPERES MAXIMUM DRAIN CURRENT 1.00 |
| AYQS | TERMINAL CIRCLE DIAMETER | INCHES NOMINAL 0.100 |
| ADAV | OVERALL DIAMETER | INCHES MAXIMUM 0.230 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| CTRD | POWER RATING PER CHARACTERISTIC | MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION 100.0 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |