NSN 5962-01-466-0645 · NIIN 014660645 · FSC 5962
NO DASHES 5962014660645
In Stock
MICROCIRCUIT,MEMORY
Microcircuits, Electronic
Application: NUCLEAR POWER PLANTS
Technical characteristics
14 rows
Straight from the federal item record. Entries the record leaves empty are shown empty — nothing is filled in on its behalf.
| MRC | Requirement | Value |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | WATTS 1.0 |
| AFGA | OPERATING TEMP RANGE | CELSIUS -55.0 TO 125.0 |
| AFJQ | STORAGE TEMP RANGE | CELSIUS -65.0 TO 150.0 |
| AGAV | END ITEM IDENTIFICATION | NUCLEAR POWER PLANTS |
| CBBL | FEATURES PROVIDED | MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | VOLTS MINIMUM INPUT -0.5 AND VOLTS MAXIMUM INPUT 7.0 |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS |
| TEST | TEST DATA DOCUMENT | STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). 96906--IL-STD-883 |
| TTQY | TERMINAL TYPE AND QUANTITY | PRINTED CIRCUIT 28 |